The physical and electronic characteristics of semiconductor material can be modified by impurities doping. Ion implantation techniques with precise energy and dose controllability allow accurate manipulation of location and concentration of implanted impurities in semiconductor host material. In semiconductor industry, ion implantation has been employed in many process steps such as junction formation and surface modification. Momentum transfer from the implanted impurities leads to structural rearrangement or even amorphization of the host lattices. Solid phase epitaxial regrowth (SPER) occurs under thermal annealing. The dynamics of SPER can be monitored in situ by a home-built time resolved reflectivity (TRR) measurement system. The measured SPER exhibits complex dynamics under influence from strain and doping. Existing model for understanding the SPER dynamics could not explain the observed phenomena, especially in highly tensile strained doped cases. Currently, we are conducting a series of experiments to gather data for reconstructing a more widely applicable model.

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